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RF Attenuator
  • Chip Attenuator

    The highest frequency can reach 18G.  Power 5W-250W is optional, too high power is not recommended for this installation. It is suitable for SMT installation and the electrode end can be on the same surface as the ground. Beryllium oxide, aluminium nitride and alumina can be selected as substrates.

Product Parameters

Model Frequency Range Power Attenuation Value VSWR (max) Size (mm) Specification
RFTXX-20ABW0406-6G DC-6.0GHz 20 W 1-30 dB 1.20 6.0×4.0×1.0 PDF
RFTXX-20ABW2550-6G DC-6.0GHz 20 W 1-30dB 1.2 5.0×2.5×1.0 PDF
RFTXX-30ABW0609-6G DC-6.0GHz 30 W 1-30dB 1.20 6.0×9.0×1.0 PDF
RFTXX-60ADJ6363 DC-3 GHz 60 W 1-30 dB 1.25 6.35×6.35×1.0 PDF
RFTXXN-10ADJ2550-4G DC-4 GHz 10 W 1-30 dB 1.20 2.5×5.0×0.64 PDF
RFTXXN-20ADJ2550 DC-3.0 GHz 20 W 1-30 dB 1.20 2.5×5.0×0.64 PDF
RFTXXN-20ADJ2550-6G DC-6 GHz 20 W 1-30 dB 1.25 2.5×5.0×0.64 PDF
RFTXXA-05ADJ5025-6G DC-6 GHz 5 W 1-30 dB 1.30 2.54×5.08×0.64 PDF
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