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RFTXXN-20CA5025C-3 Chip Attenuator RF Attenuator
Model RFTXXN-20CA5025C-3 (XX= Attenuation value) Resistance Range 50 Ω Frequency Range DC~3.0GHz VSWR 1.25 max Power 20 W Attenuation Value(dB) 01-10dB
11-20dB
21-30dB
Attenuation Tolerance(dB) ±0.6dB
±0.8dB
±1.0dB
Temperature Coefficient <150ppm/℃ Substrate Material AlN Resistance Technology Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFTXXN-10CA5025C-6 Chip Attenuator RF Attenuator
Model RFTXXN-10CA5025C-6 (XX= Attenuation value) Resistance Range 50 Ω Frequency Range DC~6.0GHz VSWR 1.25 max Power 10 W Attenuation Value(dB) 01-10dB
11-20dB
Attenuation Tolerance(dB) ±0.6dB
±0.8dB
Temperature Coefficient <150ppm/℃ Substrate Material AlN Resistance Technology Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFTXX-250RM1313K Leaded Resistor RF Resistor
Model RFTXX-250RM1313K Power 250 W Resistance XX Ω~ (10-1000Ω Customizable) Resistance Tolerance ±5% Capacitance 2.0 PF@100Ω Temperature Coefficient <150ppm/℃ Substrate BeO Cover AL2O3 Lead Copper silver plating Resistive Element Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFTXX-10RM5025C Leaded Resistor RF Resistor
Model RFTXX-10RM5025C Power 10 W Resistance XX Ω~ (10-3000Ω Customizable) Resistance Tolerance ±5% Capacitance 1.8 PF@100Ω Temperature Coefficient <150ppm/℃ Substrate BeO Cover AL2O3 Lead 99.99% pure silver Resistive Element Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFTXXN-10CR2550C Chip Resistor RF Resistor
Model RFTXXN-10CR2550C Power 10 W Resistance XX Ω (10~3000Ω Customizable) Resistance Tolerance ±5% Temperature Coefficient <150ppm/℃ Substrate AlN Resistive Element Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFTXX-20CR2550C Chip Resistor RF Resistor
Model RFTXX-20CR2550C Power 20 W Resistance XX Ω (10~3000Ω Customizable) Resistance Tolerance ±5% Temperature Coefficient <150ppm/℃ Substrate BeO Resistive Element Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFTXX-30CR2550TA Surface Mount Resistor RF Resistor
Model RFTXX-30CR2550TA Power 30W Resistance XX Ω (10~3000Ω Customizable) Resistance Tolerance ±5% Temperature Coefficient <150ppm/℃ Substrate BeO Resistive Element Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
Broadband Isolator
Broadband isolators are important components in RF communication systems, providing a range of advantages that make them highly suitable for various applications. These isolators provide broadband coverage to ensure effective performance over a wide frequency range. With their ability to isolate signals, they can prevent interference from out of band signals and maintain the integrity of in band signals.One of the main advantages of broadband isolators is their excellent high isolation performance. They effectively isolate the signal at the antenna end, ensuring that the signal at the antenna end is not reflected into the system. At the same time, these isolators have good port standing wave characteristics, reducing reflected signals and maintaining stable signal transmission.
Frequency range 56MHz to 40GHz, BW up to 13.5GHz.
Military, space and commercial applications.
Low insertion loss, high isolation, high power handling.
Custom design available upon request.
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RFTXX-30CR6363C Surface Mount Resistor RF Resistor
Model RFTXX-30CR6363C Power 30W Resistance XX Ω (10~3000Ω Customizable) Resistance Tolerance ±5% Temperature Coefficient <150ppm/℃ Substrate BeO Resistive Element Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFTXX-30CR2550W Surface Mount Resistor RF Resistor
Model RFTXX-30CR2550W Power 30 W Resistance XX Ω (10~3000Ω Customizable) Resistance Tolerance ±5% Temperature Coefficient <150ppm/℃ Substrate BeO Resistive Element Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFTXXN-02CR2550B, Chip Resistor, RF Resistor
Model RFTXXN-02CR2550B Power 2 W Resistance XX Ω (10~3000Ω Customizable) Resistance Tolerance ±5% Temperature Coefficient <150ppm/℃ Substrate AlN Resistive Element Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
Microstrip attenuator with sleeve
Microstrip attenuator with sleeve refers to a spiral microstrip attenuation chip with a specific attenuation value inserted into a metal circular tube of a specific size (the tube is generally made of aluminum material and requires conductive oxidation, and can also be plated with gold or silver as needed).
Custom design available upon request.
