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RFT50N-05TJ1225 DC~12.0GHz Leaded Termination
Model RFT50A-05TM0404 Frequency Range DC~6.0GHz Power 5 W Resistance Range 50 Ω Resistance tolerance ±5% VSWR 1.20 max Temperature coefficient <150ppm/℃ Substrate material Al2O3 Cap material Al2O3 Lead 99.99% Sterling silver Resistance technology Thick Film Operating Temperature -55 to +155°C (See de Power De-rating) Typical Performance: Installation method Power De-rating Reflow time and temperature diagram: P/N Designation Matters needing attent... -
RFT50-10CT0404 Chip Termination
Model RFT50-10CT0404 Frequency Range DC~10.0GHz Power 10 W Resistance Range 50 Ω Resistance tolerance ±5% VSWR DC~6.0GHz 1.20MaxDC~10.0GHz 1.30Max Temperature coefficient <150ppm/℃ Substrate material BeO Resistance technology Thick Film Operating Temperature -55 to +155°C (See de Power De-rating) Typical Performance: Installation method Power De-rating Reflow time and temperature diagram: P/N Designation Matters needing attention ■ After the storage p... -
Flanged Attenuator
Flanged attenuator refers to an RF leaded attenuator with mounting flanges. It is made by welding the RF leaded attenuator onto the flange. It has the same characteristics as leaded attenuators and with better ability to dissipate heat. The material commonly used for flange is made of copper plated with nickel or silver. Attenuation chips are made by selecting appropriate sizes and substrates {usually beryllium oxide(BeO), aluminum nitride(AlN), aluminum oxide(Al2O3), or other better substrate materials} based on different power requirements and frequencies, and then sintering them through resistance and circuit printing. Flanged attenuator is an integrated circuit widely used in the electronic field, mainly used to regulate and reduce the strength of electrical signals. It plays an important role in wireless communication, RF circuits, and other applications that require signal strength control.
Custom design available upon request.
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