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RFTXX-100RM2510B Flanged Resistor RF Resistor
Model RFTXX-100RM2510B Power 100 W Resistance XX Ω (10~1000Ω Customizable) Resistance Tolerance ±5% Capacitance 4.0 PF@100Ω Temperature Coefficient <150ppm/℃ Substrate BeO Cover AL2O3 Mounting Flange Brass Lead Copper silver plating Resistive Element Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFTXX-10RM7750 Flanged Resistor RF Resistor
Model RFTXX-10RM7750 Power 10 W Resistance XX Ω (10~3000Ω Customizable) Resistance Tolerance ±5% Capacitance 1.2 PF Temperature Coefficient <150ppm/℃ Substrate BeO Cover AL2O3 Mounting Flange Brass Lead 99.99% pure silver Resistive Element Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFTXXN-60RM1306 Flanged Resistor RF Resistor
Model RFTXXN-60RM1306 Power 60 W Resistance XX Ω (10~2000Ω Customizable) Resistance Tolerance ±5% Capacitance 2.9 PF@100Ω Temperature Coefficient <150ppm/℃ Substrate ALN Cover AL2O3 Mounting Flange Brass Lead 99.99% pure silver Resistive Element Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFTXX-60RM2006F Flanged Resistor RF Resistor
Model RFTXX-60RM2006F Power 60 W Resistance XX Ω (10~2000Ω Customizable) Resistance Tolerance ±5% Capacitance 1.2 PF@100Ω Temperature Coefficient <150ppm/℃ Substrate BeO Cover AL2O3 Mounting Flange Brass Lead 99.99% pure silver Resistive Element Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFTXX-05CR2550B RF Resistor
Model RFTXX-05CR2550B Power 5 W Resistance XX Ω (10~3000Ω Customizable) Resistance Tolerance ±5% Temperature Coefficient <150ppm/℃ Substrate BeO Resistive Element Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFT50-60TM1306 RF Termination
Model RFT50-60TM1306(R,L,I) Frequency Range DC~6.0GHz Power 60 W Resistance Range 50 Ω Resistance Tolerance ±5% VSWR 1.25 max Temperature Coefficient <150ppm/℃ Substrate Material BeOO Cap Material Al2O3 Flange Nickel-plated copper Lead 99.99% Sterling silver Resistance Technology Thick Film Operating Temperature -55 to +150°C (See de Power De-rating) -
RFT50N-05TJ1225 Leaded Termination
Model RFT50N-05TJ1225 Frequency Range DC~12.0GHz Power 5 W Resistance Range 50 Ω Resistance tolerance ±5% VSWR DC~11.0GHz 1.25 MaxDC~12.0GHz 1.30 Max Temperature coefficient <150ppm/℃ Substrate material AlN Cap material Medium Lead 99.99% Sterling silver Resistance technology Thick Film Operating Temperature -55 to +155°C (See de Power De-rating) -
RFT50N-10CT2550 Chip Termination
Model RFT50N-10CT2550 Frequency Range DC~6.0GHz Power 10 W Resistance Range 50 Ω Resistance tolerance ±5% VSWR 1.20 max Temperature coefficient <150ppm/℃ Substrate material AlN Resistance technology Thick Film Operating Temperature -55 to +155°C (See de Power De-rating) -
4-PD08-F1716-S 0.5-18GHz RF Power Divider
Features and Electrical specifications:
Model PD08-F1716-S/0.5-18GHz Frequency Range 0.5-18 GHz Insertion Loss ≤6.0dB Isolation 13 dB Min VSWR Input: 2.00 Max Output: 1.70 Max Amplitude Unbalance ±0.5 dB Phase Unbalance ± 12° Rated Power Forward Power: 30 W Reverse Power: 1 W Impedance 50 Ω Connector Type SMA-F Dimension 172.0X160.0X10.0 mm Surface Finishing Grey Painting Operating Temperature -45 ~ +85°C ROHS Compliant Yes -
3-PD08-F1111-S 500-8000MHz RF Power Divider
Features and Electrical specifications:
Model PD08-F1111-S/500-8000MHz Frequency Range 500-8000 MHz Insertion Loss ≤2.50dB Isolation 18 dB Min VSWR Input: 1.50 Max Output: 1.40 Max Amplitude Unbalance ±0.5 dB Phase Unbalance ± 5° Rated Power Forward Power: 20 W Reverse Power: 1 W Impedance 50 Ω Connector Type SMA-F Dimension 114.5X114.0X10.0 mm Surface Finishing Grey Painting Operating Temperature -45 ~ +85°C ROHS Compliant Yes