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Leaded Attenuator

Leaded Attenuator is an integrated circuit widely used in the electronic field, mainly used to regulate and reduce the strength of electrical signals. It plays an important role in wireless communication, RF circuits, and other applications that require signal strength control.

Attenuation chips are typically made by selecting appropriate substrate materials (typically aluminum oxide, aluminum nitride, beryllium oxide, etc.) based on different power and frequency, and using resistance processes (thick film or thin film processes).


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Overview

The basic principle of a Flangeless Mount Attenuator is to consume some of the energy of the input signal, causing it to generate a lower intensity signal at the output end. This can achieve accurate control and adaptation of signals in the circuit to meet specific requirements. Flangeless Mount Attenuators can adjust a wide range of attenuation values, usually between a few decibels to tens of decibels, to meet the signal attenuation needs in different scenarios.

Flangeless Mount Attenuators have a wide range of applications in wireless communication systems. For example, in the field of mobile communication, Flangeless Mount Attenuators are used to adjust transmission power or reception sensitivity to ensure signal adaptability at different distances and environmental conditions. In RF circuit design, Flangeless Mount Attenuators can be used to balance the strength of input and output signals, avoiding high or low signal interference. In addition, Flangeless Mount Attenuators are widely used in testing and measurement fields, such as calibrating instruments or adjusting signal levels.

It should be noted that when using Flangeless Mount Attenuators, it is necessary to select them based on specific application scenarios, and pay attention to their operating frequency range, maximum power consumption, and linearity parameters to ensure their normal operation and long-term stability.

After years of research and development and production of resistors and attenuation pads, our company has a comprehensive design and production capacity. We welcome customers to choose or customize.

Data Sheet

Power Freq. Range GHz Dimension(mm) Attenuation Value
dB
Substrate Material Configuration Data Sheet (PDF)
A B H G L W
5W 3GHz 4.0  4.0  1.0  1.8  3.0  1.0  01-10、15、17、20、25、30 Al2O3 FIG 1    RFTXXA-05AM0404-3G
10W DC-4.0 2.5  5.0  1.0  2.0  4.0  1.0  0.5、01-04、07、10、11 BeO FIG 2   RFTXX-10AM2550B-4G
30W DC-6.0 6.0  6.0  1.0  1.8  5.0  1.0  01-10、15、20、25、30 BeO FIG 1   RFTXX-30AM0606-6G
60W DC-3.0 6.35  6.35  1.0  2.0  5.0  1.4  01-10、16、20 BeO FIG 2   RFTXX-60AM6363B-3G
6.35  6.35  1.0  2.0  5.0  1.4  01-10、16、20 BeO FIG 3   RFTXX-60AM6363C-3G
DC-6.0 6.0  6.0  1.0  1.8  5.0  1.0  01-10、15、20、25、30 BeO FIG 1   RFTXX-60AM0606-6G
6.35  6.35  1.0  2.0  5.0  1.0  20 ALN FIG 1   RFT20N-60AM6363-6G
100W DC-3.0 8.9  5.7  1.0  2.0  5.0  1.0  13、20、30  ALN FIG 1   RFTXXN-100AJ8957-3G
8.9  5.7  1.0  2.0  5.0  1.0  20、30  ALN FIG 4   RFTXXN-100AJ8957T-3G
DC-6.0  9.0  6.0  2.5  3.3  5.0  1.0  01-10、15、20、25、30 BeO FIG1   RFTXX-100AM0906-6G
150W DC-3.0 9.5  9.5  1.0  2.0  5.0  1.0  03、04(AlN)
12、30 (BeO)
ALN
BeO
FIG2   RFTXXN-150AM9595B-3G
  RFTXX-150AM9595B-3G
10.0  10.0  1.5  2.5  6.0  2.4  25、26、27、30 BeO FIG1   RFTXX-150AM1010-3G
DC-6.0 10.0  10.0  1.5  2.5  6.0  2.4    01-10、15、17、19、20、21、23、24 BeO FIG1   RFTXX-150AM1010-6G
250W DC-1.5 10.0  10.0  1.5  2.5  6.0  2.4  01-03、20、30  BeO FIG1   RFTXX-250AM1010-1.5G
300W DC-1.5 10.0  10.0  1.5  2.5  6.0  2.4  01-03、30  BeO FIG1   RFTXX-300AM1010-1.5G

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